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TLP250 Optocoupler

Description

The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated photodetector.

This unit is 8-lead DIP package.

TLP250 is suitable for gate driving circuit of IGBT or power MOSFET.

Features:

  1. Input threshold current: 5mA(max) 
  2. Supply current : 11mA(max) 
  3. Supply voltage : 10-35V 
  4. Output current : ±1.5A (max) 
  5. Switching time tpLH/tpHL): 0.5μs(max) 
  6. Isolation voltage: 2500Vrms(min) 
  7. UL-recognized: UL 1577, File No.E67349 
  8. cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 
  9. VDE-Approved: EN 60747-5- 5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4).
General Specification
Package/CasePDIP-8
Minimum Supply Voltage (V)24
Maximum Supply Voltage (V)35
Product TypePower MOS FET Gate Drive
Operating Temperature Range (°C)–55° C to +125° C
Mounting TypeThrough Hole
Shipment Weight0.005 kg
Shipment Dimensions3 × 3 × 3 cm

Documentation:

  1. Datasheet

Package Includes:

1 x TLP250 Optocoupler


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