The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated photodetector.
This unit is 8-lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOSFET.
Features:
- Input threshold current: 5mA(max)
- Supply current : 11mA(max)
- Supply voltage : 10-35V
- Output current : ±1.5A (max)
- Switching time tpLH/tpHL): 0.5μs(max)
- Isolation voltage: 2500Vrms(min)
- UL-recognized: UL 1577, File No.E67349
- cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
- VDE-Approved: EN 60747-5- 5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4).
| General Specification |
| Package/Case | PDIP-8 |
| Minimum Supply Voltage (V) | 24 |
| Maximum Supply Voltage (V) | 35 |
| Product Type | Power MOS FET Gate Drive |
| Operating Temperature Range (°C) | –55° C to +125° C |
| Mounting Type | Through Hole |
| Shipment Weight | 0.005 kg |
| Shipment Dimensions | 3 × 3 × 3 cm |
Documentation:
- Datasheet
Package Includes:
1 x TLP250 Optocoupler