Menu
Your Cart

IRFZ44N MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:

  •  Advanced Process Technology
  •  Ultra Low On-Resistance
  •  Dynamic dv/dt Rating
  •  175°C Operating Temperature
  • Fast Switching
  •  Fully Avalanche Rated

Review

Write a review

Note: HTML is not translated!
Bad Good