Photoswitch Photomicrosensor EE-SX671

Type

Grooved Type (L-shaped)

Luminous method

Non-modulated

Sensing method

Through-beam type

Sensing distance

Slot width: 5 mm

Operation mode

Dark-ON/Light-ON (selectable)

Standard sensing object

Opaque, 2 x 0.8 mm min.

Differential distance elements

0.025 mm max.

Light source （Peak wavelength）

Infrared LED (940 nm)

Indicator

No incident light (red)

Power supply voltage

5 to 24 VDC ±10%
ripple (p-p) 10% max.

Current consumption

12 mA (L terminal open)

Control output

Output type

NPN open collector output

Load power supply voltage

5 to 24 VDC

Load curren

100 mA max.

Residual voltage

at 100 mA load current: 0.8 V max.
at 40 mA load current: 0.4 V max.

Protection circuits

Output short-cut protection

Response frequency elements

1 kHz min.
Average value: 3 kHz

Illumination on the surface receiver

Fluorescent light: 1000 lx max.

Ambient temperature

Operating: -25 to 55 ℃ (with no freezing or condensation)
Storage: -30 to 80 ℃ (with no freezing or condensation)

Ambient humidity

Operating: 5 to 85% RH (with no condensation)
Storage: 5 to 95% RH (with no condensation)

Vibration resistance

Destruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)

Shock resistance

Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions

Degree of protection

IP50

Connection method

Connector type (Direct soldering possible)

Weight

Package: Approx. 3 g

Material

Case: Polybutylene terephthalate (PBT)
Emitter/Receiver Cover: Polycarbonate (PC)