TIP142T

Description

Price: 25৳
Stock: In Stock
Product Code: 415
Model: CBD-1609

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS Designed for general−purpose amplifier and low frequency switching applications.

Applications:

Linear and switching industrial equipment

Features:

Type - NPN
Collector-Emitter Voltage: 100 V
Collector-Base Voltage: 100 V
Emitter-Base Voltage: 5 V
Collector Current: 8 A
Collector Dissipation - 70 W
DC Current Gain (hfe) - 1000 to 15000
Operating and Storage Junction Temperature Range -65 to +150 °C

General Specification
Collector−Base Voltage VCBO	100V
Collector−Emitter Voltage VCEO	100V
Emitter-Base Voltage VEBO	5V
Product Type	TIP142T TIP147T Complementary power Darlington transistors
Operating Temperature Range (°C)	–55° C to +125° C
Mounting Type	Through Hole
Shipment Weight	0.005 kg
Shipment Dimensions	3 × 3 × 3 cm