The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS Designed for general−purpose amplifier and low frequency switching applications.
Applications:
- Linear and switching industrial equipment
Features:
- Type - NPN
- Collector-Emitter Voltage: 100 V
- Collector-Base Voltage: 100 V
- Emitter-Base Voltage: 5 V
- Collector Current: 8 A
- Collector Dissipation - 70 W
- DC Current Gain (hfe) - 1000 to 15000
- Operating and Storage Junction Temperature Range -65 to +150 °C
General Specification |
Collector−Base Voltage VCBO | 100V |
Collector−Emitter Voltage VCEO | 100V |
Emitter-Base Voltage VEBO | 5V |
Product Type | TIP142T TIP147T Complementary power Darlington transistors |
Operating Temperature Range (°C) | –55° C to +125° C |
Mounting Type | Through Hole |
Shipment Weight | 0.005 kg |
Shipment Dimensions | 3 × 3 × 3 cm |
Documentation:
- Datasheet
Package Includes:
1 x TIP142T