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The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS, 125 WATTS Designed for general−purpose amplifier and low frequency switching applications.


  1. Linear and switching industrial equipment


  1. Type - NPN
  2. Collector-Emitter Voltage: 100 V
  3. Collector-Base Voltage: 100 V
  4. Emitter-Base Voltage: 5 V
  5. Collector Current: 8 A
  6. Collector Dissipation - 70 W
  7. DC Current Gain (hfe) - 1000 to 15000
  8. Operating and Storage Junction Temperature Range -65 to +150 °C
General Specification
Collector−Base Voltage VCBO100V
Collector−Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
Product TypeTIP142T TIP147T Complementary power Darlington transistors
Operating Temperature Range (°C)–55° C to +125° C
Mounting TypeThrough Hole
Shipment Weight0.005 kg
Shipment Dimensions3 × 3 × 3 cm


  1. Datasheet

Package Includes:

1 x TIP142T


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